Tehniskie dokumenti
Specifikācija
Brand
InfineonMemory Size
512kbit
Organisation
64K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
18ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Width
3.98mm
Maximum Operating Supply Voltage
3.6 V
Height
1.48mm
Maximum Operating Temperature
+85 °C
Number of Words
64K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Produkta apraksts
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 113,00
€ 11,30 Katrs (tiek piegadats Tubina) (bez PVN)
€ 136,73
€ 13,67 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
€ 113,00
€ 11,30 Katrs (tiek piegadats Tubina) (bez PVN)
€ 136,73
€ 13,67 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena |
---|---|
10 - 49 | € 11,30 |
50 - 99 | € 11,00 |
100 - 499 | € 10,70 |
500+ | € 10,40 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonMemory Size
512kbit
Organisation
64K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
18ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Width
3.98mm
Maximum Operating Supply Voltage
3.6 V
Height
1.48mm
Maximum Operating Temperature
+85 °C
Number of Words
64K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Produkta apraksts
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.