Tehniskie dokumenti
Specifikācija
Brand
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
4 x 4.5 x 0.7mm
Length
4.5mm
Width
4mm
Maximum Operating Supply Voltage
3.6 V
Height
0.7mm
Maximum Operating Temperature
+85 °C
Number of Words
32K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Number of Bits per Word
8bit
Produkta apraksts
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 16,80
€ 8,40 Katrs (Paka ir 2) (bez PVN)
€ 20,33
€ 10,164 Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
€ 16,80
€ 8,40 Katrs (Paka ir 2) (bez PVN)
€ 20,33
€ 10,164 Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
2 - 8 | € 8,40 | € 16,80 |
10 - 18 | € 6,40 | € 12,80 |
20 - 98 | € 6,30 | € 12,60 |
100 - 498 | € 6,10 | € 12,20 |
500+ | € 6,00 | € 12,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
4 x 4.5 x 0.7mm
Length
4.5mm
Width
4mm
Maximum Operating Supply Voltage
3.6 V
Height
0.7mm
Maximum Operating Temperature
+85 °C
Number of Words
32K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Number of Bits per Word
8bit
Produkta apraksts
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.