Infineon FF600R12KT4HOSA1 Dual IGBT Module, 600 A 1200 V AG-62MM
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
2
Package Type
AG-62MM
Configuration
Dual
Channel Type
N
Transistor Configuration
Series
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€ 436,00
€ 218,00 Katrs (tiek piegadats Penali) (bez PVN)
€ 527,56
€ 263,78 Katrs (tiek piegadats Penali) (Ieskaitot PVN)
Industriālais iepakojums (Paplāte)
2
€ 436,00
€ 218,00 Katrs (tiek piegadats Penali) (bez PVN)
€ 527,56
€ 263,78 Katrs (tiek piegadats Penali) (Ieskaitot PVN)
Industriālais iepakojums (Paplāte)
2
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena |
|---|---|
| 2 - 4 | € 218,00 |
| 5+ | € 209,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
2
Package Type
AG-62MM
Configuration
Dual
Channel Type
N
Transistor Configuration
Series
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products