Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
240 A
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.05 kW
Configuration
Series
Package Type
ECONOD
Mounting Type
PCB Mount
Channel Type
N
Pin Count
11
Switching Speed
1MHz
Transistor Configuration
Series
Dimensions
122.1 x 62 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Produkta apraksts
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 99,50
Katrs (bez PVN)
€ 120,40
Katrs (Ieskaitot PVN)
1
€ 99,50
Katrs (bez PVN)
€ 120,40
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 2 | € 99,50 |
3+ | € 97,50 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
240 A
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.05 kW
Configuration
Series
Package Type
ECONOD
Mounting Type
PCB Mount
Channel Type
N
Pin Count
11
Switching Speed
1MHz
Transistor Configuration
Series
Dimensions
122.1 x 62 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Produkta apraksts
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.