Infineon OptiMOS™ 2 N-Channel MOSFET, 1.4 A, 20 V, 3-Pin SOT-323 BSS816NWH6327XTSA1

RS Stock No.: 110-7113PBrand: InfineonManufacturers Part No.: BSS816NWH6327XTSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-323

Series

OptiMOS™ 2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.75V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

2mm

Typical Gate Charge @ Vgs

0.6 nC @ 2.5 V

Width

1.25mm

Height

0.8mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1.1V

Product details

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 19.50

€ 0.065 Each (Supplied on a Reel) (Exc. Vat)

€ 23.60

€ 0.079 Each (Supplied on a Reel) (inc. VAT)

Infineon OptiMOS™ 2 N-Channel MOSFET, 1.4 A, 20 V, 3-Pin SOT-323 BSS816NWH6327XTSA1
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 300.

Production -

Available in multiples of 300.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

300

Available in multiples of 300
300€ 19.50
600€ 39.00
900€ 58.50
1200€ 78.00
1500€ 97.50
1800€ 117.00
2100€ 136.50
2400€ 156.00
2700€ 175.50
3000€ 195.00
3300€ 214.50
3600€ 234.00
3900€ 253.50
4200€ 273.00
4500€ 292.50

€ 19.50

€ 0.065 Each (Supplied on a Reel) (Exc. Vat)

€ 23.60

€ 0.079 Each (Supplied on a Reel) (inc. VAT)

Infineon OptiMOS™ 2 N-Channel MOSFET, 1.4 A, 20 V, 3-Pin SOT-323 BSS816NWH6327XTSA1

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 300.

Production -

Available in multiples of 300.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

300

Available in multiples of 300
300€ 19.50
600€ 39.00
900€ 58.50
1200€ 78.00
1500€ 97.50
1800€ 117.00
2100€ 136.50
2400€ 156.00
2700€ 175.50
3000€ 195.00
3300€ 214.50
3600€ 234.00
3900€ 253.50
4200€ 273.00
4500€ 292.50

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-323

Series

OptiMOS™ 2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.75V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

2mm

Typical Gate Charge @ Vgs

0.6 nC @ 2.5 V

Width

1.25mm

Height

0.8mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1.1V

Product details

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more