P-Channel MOSFET Transistor, 1.18 A, 20 V, 3-Pin SOT-23 Infineon BSS215P
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
1.18 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
3.6 nC @ 4.5 V
Width
1.3mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1mm
Izcelsmes valsts
China
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P.O.A.
Katrs (Paka ir 50) (bez PVN)
50
P.O.A.
Katrs (Paka ir 50) (bez PVN)
50
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Ideate. Create. Collaborate
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Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
1.18 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
3.6 nC @ 4.5 V
Width
1.3mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1mm
Izcelsmes valsts
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products