Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
280 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Width
1.25mm
Transistor Material
Si
Number of Elements per Chip
1
Height
0.8mm
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Produkta apraksts
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,158
Katrs (Rulli ir 500) (bez PVN)
€ 0,191
Katrs (Rulli ir 500) (Ieskaitot PVN)
500
€ 0,158
Katrs (Rulli ir 500) (bez PVN)
€ 0,191
Katrs (Rulli ir 500) (Ieskaitot PVN)
500
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
500 - 1000 | € 0,158 | € 79,00 |
1500 - 2500 | € 0,106 | € 53,00 |
3000 - 5500 | € 0,082 | € 41,00 |
6000+ | € 0,072 | € 36,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
280 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Width
1.25mm
Transistor Material
Si
Number of Elements per Chip
1
Height
0.8mm
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Produkta apraksts
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.