N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-323 Infineon BSS138WH6327XTSA1

RS noliktavas nr.: 826-9989Ražotājs: InfineonRažotāja kods: BSS138WH6327XTSA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-323 (SC-70)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

1

Height

0.8mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Produkta apraksts

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,158

Katrs (Rulli ir 500) (bez PVN)

€ 0,191

Katrs (Rulli ir 500) (Ieskaitot PVN)

N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-323 Infineon BSS138WH6327XTSA1

€ 0,158

Katrs (Rulli ir 500) (bez PVN)

€ 0,191

Katrs (Rulli ir 500) (Ieskaitot PVN)

N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-323 Infineon BSS138WH6327XTSA1
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
500 - 1000€ 0,158€ 79,00
1500 - 2500€ 0,106€ 53,00
3000 - 5500€ 0,082€ 41,00
6000+€ 0,072€ 36,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-323 (SC-70)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

1

Height

0.8mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Produkta apraksts

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more