N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 Infineon BSS138NH6433XTMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Series
SIPMOS
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Number of Elements per Chip
1
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Produkta apraksts
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,11
Katrs (Rulli ir 500) (bez PVN)
€ 0,133
Katrs (Rulli ir 500) (Ieskaitot PVN)
500
€ 0,11
Katrs (Rulli ir 500) (bez PVN)
€ 0,133
Katrs (Rulli ir 500) (Ieskaitot PVN)
500
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 500 - 500 | € 0,11 | € 55,00 |
| 1000 - 2000 | € 0,083 | € 41,50 |
| 2500 - 4500 | € 0,077 | € 38,50 |
| 5000 - 12000 | € 0,073 | € 36,50 |
| 12500+ | € 0,067 | € 33,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Series
SIPMOS
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Number of Elements per Chip
1
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Produkta apraksts
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products