Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Series
SIPMOS
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Transistor Material
Si
Width
1.3mm
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,066
Katrs (Rulli ir 3000) (bez PVN)
€ 0,08
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,066
Katrs (Rulli ir 3000) (bez PVN)
€ 0,08
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
3000 - 3000 | € 0,066 | € 198,00 |
6000 - 12000 | € 0,062 | € 186,00 |
15000+ | € 0,058 | € 174,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Series
SIPMOS
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Transistor Material
Si
Width
1.3mm
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.