Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.4 nC @ 5 V
Width
1.3mm
Transistor Material
Si
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Height
1mm
Izcelsmes valsts
China
€ 4,85
€ 0,485 Katrs (Paka ir 10) (bez PVN)
€ 5,87
€ 0,587 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 4,85
€ 0,485 Katrs (Paka ir 10) (bez PVN)
€ 5,87
€ 0,587 Katrs (Paka ir 10) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 40 | € 0,485 | € 4,85 |
50 - 90 | € 0,313 | € 3,13 |
100+ | € 0,304 | € 3,04 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.4 nC @ 5 V
Width
1.3mm
Transistor Material
Si
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Height
1mm
Izcelsmes valsts
China