N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Infineon BSS119NH6327XTSA1

RS noliktavas nr.: 827-0119Ražotājs: InfineonRažotāja kods: BSS119NH6327XTSA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

0.6 nC @ 10 V

Width

1.3mm

Transistor Material

Si

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Height

1mm

Produkta apraksts

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,133

Katrs (Rulli ir 250) (bez PVN)

€ 0,161

Katrs (Rulli ir 250) (Ieskaitot PVN)

N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Infineon BSS119NH6327XTSA1

€ 0,133

Katrs (Rulli ir 250) (bez PVN)

€ 0,161

Katrs (Rulli ir 250) (Ieskaitot PVN)

N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Infineon BSS119NH6327XTSA1
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
250 - 250€ 0,133€ 33,25
500 - 1000€ 0,128€ 32,00
1250 - 2250€ 0,12€ 30,00
2500 - 6000€ 0,111€ 27,75
6250+€ 0,104€ 26,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

0.6 nC @ 10 V

Width

1.3mm

Transistor Material

Si

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Height

1mm

Produkta apraksts

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more