N-Channel MOSFET, 2.3 A, 60 V, 3-Pin SC-59 Infineon BSR606NH6327XTSA1

RS noliktavas nr.: 170-2253Ražotājs: InfineonRažotāja kods: BSR606NH6327XTSA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

60 V

Package Type

SC-59

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

3.7 nC @ 5 V

Width

1.6mm

Height

1.1mm

Series

BSR606N

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.15V

Automotive Standard

AEC-Q101

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,17

Katrs (Rulli ir 3000) (bez PVN)

€ 0,206

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 2.3 A, 60 V, 3-Pin SC-59 Infineon BSR606NH6327XTSA1

€ 0,17

Katrs (Rulli ir 3000) (bez PVN)

€ 0,206

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 2.3 A, 60 V, 3-Pin SC-59 Infineon BSR606NH6327XTSA1
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
3000 - 3000€ 0,17€ 510,00
6000+€ 0,161€ 483,00

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

60 V

Package Type

SC-59

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

3.7 nC @ 5 V

Width

1.6mm

Height

1.1mm

Series

BSR606N

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.15V

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more