Infineon SIPMOS® P-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-223 BSP322PH6327XTSA1

RS noliktavas nr.: 826-9279PRažotājs: InfineonRažotāja kods: BSP322PH6327XTSA1
brand-logo
Skatīt visu MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Typical Gate Charge @ Vgs

12.4 nC @ 10 V

Height

1.6mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Noliktavas stāvoklis patreiz nav pieejams

€ 28,60

€ 0,572 Katrs (tiek piegadats Rulli) (bez PVN)

€ 34,61

€ 0,692 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon SIPMOS® P-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-223 BSP322PH6327XTSA1
Izvēlēties iepakojuma veidu

Industriālais iepakojums (Rullis)

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 50.

Ražošana -

Pieejams komplektos pa 50.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

50

Pieejams komplektos pa 50
50€ 28,60
100€ 44,10
150€ 66,15
200€ 88,20
250€ 103,00
300€ 123,60
350€ 144,20
400€ 164,80
450€ 185,40
500€ 191,50
550€ 210,65
600€ 229,80
650€ 248,95
700€ 268,10
750€ 287,25

€ 28,60

€ 0,572 Katrs (tiek piegadats Rulli) (bez PVN)

€ 34,61

€ 0,692 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon SIPMOS® P-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-223 BSP322PH6327XTSA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Industriālais iepakojums (Rullis)

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 50.

Ražošana -

Pieejams komplektos pa 50.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

50

Pieejams komplektos pa 50
50€ 28,60
100€ 44,10
150€ 66,15
200€ 88,20
250€ 103,00
300€ 123,60
350€ 144,20
400€ 164,80
450€ 185,40
500€ 191,50
550€ 210,65
600€ 229,80
650€ 248,95
700€ 268,10
750€ 287,25

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Rullis
50 - 50€ 0,572€ 28,60
100 - 200€ 0,441€ 22,05
250 - 450€ 0,412€ 20,60
500 - 1200€ 0,383€ 19,15
1250+€ 0,355€ 17,75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Typical Gate Charge @ Vgs

12.4 nC @ 10 V

Height

1.6mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more