Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
200 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+150 °C
Length
5.35mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
6.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Height
1.1mm
Series
BSC500N20NS3 G
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,05
Katrs (Rulli ir 5000) (bez PVN)
€ 1,27
Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
€ 1,05
Katrs (Rulli ir 5000) (bez PVN)
€ 1,27
Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
200 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+150 °C
Length
5.35mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
6.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Height
1.1mm
Series
BSC500N20NS3 G