Dual N-Channel MOSFET, 40 A, 25 V, 8-Pin TISON-8 Infineon BSC0910NDIATMA1

RS noliktavas nr.: 214-8976Ražotājs: InfineonRažotāja kods: BSC0910NDIATMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

25 V

Package Type

TISON-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0059 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

2

Transistor Material

Si

Series

OptiMOS

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,20

Katrs (Rulli ir 5000) (bez PVN)

€ 1,452

Katrs (Rulli ir 5000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 40 A, 25 V, 8-Pin TISON-8 Infineon BSC0910NDIATMA1

€ 1,20

Katrs (Rulli ir 5000) (bez PVN)

€ 1,452

Katrs (Rulli ir 5000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 40 A, 25 V, 8-Pin TISON-8 Infineon BSC0910NDIATMA1
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

25 V

Package Type

TISON-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0059 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

2

Transistor Material

Si

Series

OptiMOS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more