N-Channel MOSFET, 85 A, 40 V, 8-Pin TDSON Infineon BSC050N04LSGATMA1

RS noliktavas nr.: 170-2275Ražotājs: InfineonRažotāja kods: BSC050N04LSGATMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

85 A

Maximum Drain Source Voltage

40 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5.49mm

Height

1.1mm

Series

BSC050N04LS G

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,465

Katrs (Rulli ir 5000) (bez PVN)

€ 0,563

Katrs (Rulli ir 5000) (Ieskaitot PVN)

N-Channel MOSFET, 85 A, 40 V, 8-Pin TDSON Infineon BSC050N04LSGATMA1

€ 0,465

Katrs (Rulli ir 5000) (bez PVN)

€ 0,563

Katrs (Rulli ir 5000) (Ieskaitot PVN)

N-Channel MOSFET, 85 A, 40 V, 8-Pin TDSON Infineon BSC050N04LSGATMA1
Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

85 A

Maximum Drain Source Voltage

40 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5.49mm

Height

1.1mm

Series

BSC050N04LS G

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V