Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Width
6.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Series
BSC050N03LS G
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,28
Katrs (Rulli ir 5000) (bez PVN)
€ 0,339
Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
€ 0,28
Katrs (Rulli ir 5000) (bez PVN)
€ 0,339
Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Width
6.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Series
BSC050N03LS G