N-Channel MOSFET, 100 A, 75 V, 8-Pin TDSON Infineon BSC036NE7NS3GATMA1

RS noliktavas nr.: 170-2317Ražotājs: InfineonRažotāja kods: BSC036NE7NS3GATMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

75 V

Package Type

TDSON

Series

BSC036NE7NS3 G

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Width

6.35mm

Number of Elements per Chip

1

Length

5.35mm

Typical Gate Charge @ Vgs

63.4 nC @ 10 V

Height

1.1mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,40

Katrs (Rulli ir 5000) (bez PVN)

€ 2,904

Katrs (Rulli ir 5000) (Ieskaitot PVN)

N-Channel MOSFET, 100 A, 75 V, 8-Pin TDSON Infineon BSC036NE7NS3GATMA1

€ 2,40

Katrs (Rulli ir 5000) (bez PVN)

€ 2,904

Katrs (Rulli ir 5000) (Ieskaitot PVN)

N-Channel MOSFET, 100 A, 75 V, 8-Pin TDSON Infineon BSC036NE7NS3GATMA1
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

75 V

Package Type

TDSON

Series

BSC036NE7NS3 G

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Width

6.35mm

Number of Elements per Chip

1

Length

5.35mm

Typical Gate Charge @ Vgs

63.4 nC @ 10 V

Height

1.1mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more