Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Height
1.1mm
Series
BSC035N10NS5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,75
Katrs (Paka ir 10) (bez PVN)
€ 3,328
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 2,75
Katrs (Paka ir 10) (bez PVN)
€ 3,328
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 10 | € 2,75 | € 27,50 |
20 - 40 | € 2,25 | € 22,50 |
50 - 90 | € 2,10 | € 21,00 |
100 - 240 | € 1,95 | € 19,50 |
250+ | € 1,80 | € 18,00 |
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Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Height
1.1mm
Series
BSC035N10NS5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V