Infineon OptiMOS™ 3 N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC035N04LSGATMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
TDSON
Series
OptiMOS™ 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.35mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 6,64
€ 0,332 Katrs (Paka ir 20) (bez PVN)
€ 8,03
€ 0,402 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
€ 6,64
€ 0,332 Katrs (Paka ir 20) (bez PVN)
€ 8,03
€ 0,402 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
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Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
TDSON
Series
OptiMOS™ 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.35mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products