Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
37 nC @ 10 V
Width
6.35mm
Height
1.1mm
Series
BSC022N04LS
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,50
Katrs (Rulli ir 5000) (bez PVN)
€ 1,815
Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
€ 1,50
Katrs (Rulli ir 5000) (bez PVN)
€ 1,815
Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
5000 - 5000 | € 1,50 | € 7 500,00 |
10000 - 10000 | € 1,50 | € 7 500,00 |
15000+ | € 1,45 | € 7 250,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
37 nC @ 10 V
Width
6.35mm
Height
1.1mm
Series
BSC022N04LS
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V