N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC016N06NSATMA1

RS noliktavas nr.: 906-4325Ražotājs: InfineonRažotāja kods: BSC016N06NSATMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.4 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

6mm

Typical Gate Charge @ Vgs

71 nC @ 10 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1.1mm

Series

OptiMOS 5

Minimum Operating Temperature

-55 °C

Produkta apraksts

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 3,25

Katrs (Paka ir 5) (bez PVN)

€ 3,932

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC016N06NSATMA1
Izvēlēties iepakojuma veidu

€ 3,25

Katrs (Paka ir 5) (bez PVN)

€ 3,932

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC016N06NSATMA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 3,25€ 16,25
50 - 120€ 2,90€ 14,50
125 - 245€ 2,75€ 13,75
250 - 495€ 2,55€ 12,75
500+€ 2,35€ 11,75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.4 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

6mm

Typical Gate Charge @ Vgs

71 nC @ 10 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1.1mm

Series

OptiMOS 5

Minimum Operating Temperature

-55 °C

Produkta apraksts

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more