Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
90 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.9 x 1.3mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
€ 30,60
€ 0,306 Katrs (tiek piegadats Rulli) (bez PVN)
€ 37,03
€ 0,37 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 30,60
€ 0,306 Katrs (tiek piegadats Rulli) (bez PVN)
€ 37,03
€ 0,37 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Rullis |
---|---|---|
100 - 240 | € 0,306 | € 3,06 |
250 - 490 | € 0,29 | € 2,90 |
500 - 990 | € 0,274 | € 2,74 |
1000+ | € 0,26 | € 2,60 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
90 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.9 x 1.3mm
Maximum Operating Temperature
+150 °C
Produkta apraksts