Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
45 mA
Maximum Collector Emitter Voltage
15 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2.5 V
Maximum Operating Frequency
5 GHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2.9 x 1.3 x 0.9mm
Produkta apraksts
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,12
Katrs (Rulli ir 3000) (bez PVN)
€ 0,145
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,12
Katrs (Rulli ir 3000) (bez PVN)
€ 0,145
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
3000 - 3000 | € 0,12 | € 360,00 |
6000 - 6000 | € 0,113 | € 339,00 |
9000+ | € 0,107 | € 321,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
45 mA
Maximum Collector Emitter Voltage
15 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2.5 V
Maximum Operating Frequency
5 GHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2.9 x 1.3 x 0.9mm
Produkta apraksts