Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
80 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Maximum Power Dissipation
580 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
8 GHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2 x 1.25 x 0.8mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,211
Katrs (Paka ir 100) (bez PVN)
€ 0,255
Katrs (Paka ir 100) (Ieskaitot PVN)
100
€ 0,211
Katrs (Paka ir 100) (bez PVN)
€ 0,255
Katrs (Paka ir 100) (Ieskaitot PVN)
100
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
100 - 400 | € 0,211 | € 21,10 |
500 - 900 | € 0,143 | € 14,30 |
1000 - 2400 | € 0,136 | € 13,60 |
2500 - 4900 | € 0,124 | € 12,40 |
5000+ | € 0,117 | € 11,70 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
80 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Maximum Power Dissipation
580 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
8 GHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2 x 1.25 x 0.8mm
Maximum Operating Temperature
+150 °C
Produkta apraksts