Infineon BFR193WH6327XTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323

RS noliktavas nr.: 826-9364Ražotājs: InfineonRažotāja kods: BFR193WH6327XTSA1
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Specifikācija

Transistor Type

NPN

Maximum DC Collector Current

80 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-323 (SC-70)

Mounting Type

Surface Mount

Maximum Power Dissipation

580 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

8 GHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

2 x 1.25 x 0.8mm

Maximum Operating Temperature

+150 °C

Produkta apraksts

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,211

Katrs (Paka ir 100) (bez PVN)

€ 0,255

Katrs (Paka ir 100) (Ieskaitot PVN)

Infineon BFR193WH6327XTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323
Izvēlēties iepakojuma veidu

€ 0,211

Katrs (Paka ir 100) (bez PVN)

€ 0,255

Katrs (Paka ir 100) (Ieskaitot PVN)

Infineon BFR193WH6327XTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
100 - 400€ 0,211€ 21,10
500 - 900€ 0,143€ 14,30
1000 - 2400€ 0,136€ 13,60
2500 - 4900€ 0,124€ 12,40
5000+€ 0,117€ 11,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Transistor Type

NPN

Maximum DC Collector Current

80 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-323 (SC-70)

Mounting Type

Surface Mount

Maximum Power Dissipation

580 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

8 GHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

2 x 1.25 x 0.8mm

Maximum Operating Temperature

+150 °C

Produkta apraksts

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more