Infineon BFP720H6327XTSA1 NPN RF Bipolar Transistor, 25 mA, 13 V, 4-Pin SOT-343
Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
25 mA
Maximum Collector Emitter Voltage
13 V
Package Type
SOT-343
Mounting Type
Surface Mount
Maximum Power Dissipation
100 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
13 V
Maximum Emitter Base Voltage
1.2 V
Pin Count
4
Number of Elements per Chip
1
Dimensions
2 x 1.25 x 0.9mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Produkta apraksts
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
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€ 636,00
€ 0,212 Katrs (Rulli ir 3000) (bez PVN)
€ 769,56
€ 0,257 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 636,00
€ 0,212 Katrs (Rulli ir 3000) (bez PVN)
€ 769,56
€ 0,257 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
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Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
25 mA
Maximum Collector Emitter Voltage
13 V
Package Type
SOT-343
Mounting Type
Surface Mount
Maximum Power Dissipation
100 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
13 V
Maximum Emitter Base Voltage
1.2 V
Pin Count
4
Number of Elements per Chip
1
Dimensions
2 x 1.25 x 0.9mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Produkta apraksts
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products