Infineon BFP640ESD NPN RF Bipolar Transistor, 50 mA, 4.1 V, 4-Pin SOT-343

RS noliktavas nr.: 825-9348Ražotājs: InfineonRažotāja kods: BFP640ESD
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Specifikācija

Transistor Type

NPN

Maximum DC Collector Current

50 mA

Maximum Collector Emitter Voltage

4.1 V

Package Type

SOT-343

Mounting Type

Surface Mount

Maximum Power Dissipation

200 mW

Maximum Collector Base Voltage

4.8 V

Maximum Emitter Base Voltage

0.5 V

Maximum Operating Frequency

45 GHz

Pin Count

4

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

2 x 1.25 x 0.8mm

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P.O.A.

Katrs (Paka ir 10) (bez PVN)

Infineon BFP640ESD NPN RF Bipolar Transistor, 50 mA, 4.1 V, 4-Pin SOT-343

P.O.A.

Katrs (Paka ir 10) (bez PVN)

Infineon BFP640ESD NPN RF Bipolar Transistor, 50 mA, 4.1 V, 4-Pin SOT-343
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehniskie dokumenti

Specifikācija

Transistor Type

NPN

Maximum DC Collector Current

50 mA

Maximum Collector Emitter Voltage

4.1 V

Package Type

SOT-343

Mounting Type

Surface Mount

Maximum Power Dissipation

200 mW

Maximum Collector Base Voltage

4.8 V

Maximum Emitter Base Voltage

0.5 V

Maximum Operating Frequency

45 GHz

Pin Count

4

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

2 x 1.25 x 0.8mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt