Infineon BFP196E6327HTSA1 NPN Bipolar Transistor, 150 mA, 12 V, 4-Pin SOT-143

RS noliktavas nr.: 178-7401Ražotājs: InfineonRažotāja kods: BFP196E6327HTSA1
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Tehniskie dokumenti

Specifikācija

Transistor Type

NPN

Maximum DC Collector Current

150 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-143

Mounting Type

Surface Mount

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

7.5 GHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

2.9 x 1.3 x 0.9mm

Maximum Operating Temperature

+150 °C

Produkta apraksts

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,111

Katrs (Rulli ir 3000) (bez PVN)

€ 0,134

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Infineon BFP196E6327HTSA1 NPN Bipolar Transistor, 150 mA, 12 V, 4-Pin SOT-143

€ 0,111

Katrs (Rulli ir 3000) (bez PVN)

€ 0,134

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Infineon BFP196E6327HTSA1 NPN Bipolar Transistor, 150 mA, 12 V, 4-Pin SOT-143
Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Transistor Type

NPN

Maximum DC Collector Current

150 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-143

Mounting Type

Surface Mount

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

7.5 GHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

2.9 x 1.3 x 0.9mm

Maximum Operating Temperature

+150 °C

Produkta apraksts

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon