Infineon BCM856SH6327XTSA1 Dual PNP Transistor, -100 mA, -65 V, 6-Pin SOT-363

RS noliktavas nr.: 752-7965Ražotājs: InfineonRažotāja kods: BCM856SH6327XTSA1
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Tehniskie dokumenti

Specifikācija

Transistor Type

PNP

Maximum DC Collector Current

-100 mA

Maximum Collector Emitter Voltage

-65 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Maximum Power Dissipation

250 mW

Minimum DC Current Gain

200

Transistor Configuration

Isolated

Maximum Collector Base Voltage

80 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

250 MHz

Pin Count

6

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Dimensions

2 x 1.25 x 0.8mm

Produkta apraksts

Dual Matched Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,394

Katrs (tiek piegadats Lente) (bez PVN)

€ 0,477

Katrs (tiek piegadats Lente) (Ieskaitot PVN)

Infineon BCM856SH6327XTSA1 Dual PNP Transistor, -100 mA, -65 V, 6-Pin SOT-363
Izvēlēties iepakojuma veidu

€ 0,394

Katrs (tiek piegadats Lente) (bez PVN)

€ 0,477

Katrs (tiek piegadats Lente) (Ieskaitot PVN)

Infineon BCM856SH6327XTSA1 Dual PNP Transistor, -100 mA, -65 V, 6-Pin SOT-363
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Lente
50 - 200€ 0,394€ 19,70
250 - 450€ 0,162€ 8,10
500 - 1200€ 0,154€ 7,70
1250 - 2450€ 0,142€ 7,10
2500+€ 0,13€ 6,50

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Transistor Type

PNP

Maximum DC Collector Current

-100 mA

Maximum Collector Emitter Voltage

-65 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Maximum Power Dissipation

250 mW

Minimum DC Current Gain

200

Transistor Configuration

Isolated

Maximum Collector Base Voltage

80 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

250 MHz

Pin Count

6

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Dimensions

2 x 1.25 x 0.8mm

Produkta apraksts

Dual Matched Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more