Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
250 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.8mm
Produkta apraksts
Dual Matched Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,083
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,10
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Standarts
50
€ 0,083
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,10
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Standarts
50
Tehniskie dokumenti
Specifikācija
Brand
InfineonTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
250 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.8mm
Produkta apraksts