Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
150 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.295 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
€ 15,50
€ 3,10 Katrs (Paka ir 5) (bez PVN)
€ 18,76
€ 3,751 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 15,50
€ 3,10 Katrs (Paka ir 5) (bez PVN)
€ 18,76
€ 3,751 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 45 | € 3,10 | € 15,50 |
50 - 120 | € 2,75 | € 13,75 |
125 - 245 | € 2,60 | € 13,00 |
250 - 495 | € 2,40 | € 12,00 |
500+ | € 2,20 | € 11,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
150 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.295 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon