Infineon AIM SiC N-Channel MOSFET, 24 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R090M1HXTMA1

RS noliktavas nr.: 349-212Ražotājs: InfineonRažotāja kods: AIMBG75R090M1HXTMA1
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

750 V

Series

AIM

Package Type

PG-TO263-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Izcelsmes valsts

Malaysia

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Noliktavas stāvoklis patreiz nav pieejams

€ 7,90

€ 7,90 Katrs (bez PVN)

€ 9,56

€ 9,56 Katrs (Ieskaitot PVN)

Infineon AIM SiC N-Channel MOSFET, 24 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R090M1HXTMA1

€ 7,90

€ 7,90 Katrs (bez PVN)

€ 9,56

€ 9,56 Katrs (Ieskaitot PVN)

Infineon AIM SiC N-Channel MOSFET, 24 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R090M1HXTMA1
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

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10 - 99€ 7,10
100 - 499€ 6,60
500 - 999€ 6,10
1000+€ 5,50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

750 V

Series

AIM

Package Type

PG-TO263-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Izcelsmes valsts

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more