Fuji Electric 7MBP75RA-120-55 3 Phase IGBT Module, 75 A 1200 V, 22-Pin P 610, PCB Mount
Tehniskie dokumenti
Specifikācija
Brand
Fuji ElectricMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
500 W
Package Type
P 610
Configuration
3 Phase
Mounting Type
PCB Mount
Channel Type
N
Pin Count
22
Transistor Configuration
3 Phase
Dimensions
109 x 88 x 22mm
Minimum Operating Temperature
-20 °C
Maximum Operating Temperature
+100 °C
Produkta apraksts
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 227,00
Katrs (bez PVN)
€ 274,67
Katrs (Ieskaitot PVN)
1
€ 227,00
Katrs (bez PVN)
€ 274,67
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
| Daudzums | Vienības cena |
|---|---|
| 1 - 1 | € 227,00 |
| 2 - 4 | € 204,00 |
| 5 - 9 | € 195,00 |
| 10 - 19 | € 189,00 |
| 20+ | € 185,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Fuji ElectricMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
500 W
Package Type
P 610
Configuration
3 Phase
Mounting Type
PCB Mount
Channel Type
N
Pin Count
22
Transistor Configuration
3 Phase
Dimensions
109 x 88 x 22mm
Minimum Operating Temperature
-20 °C
Maximum Operating Temperature
+100 °C
Produkta apraksts
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products