Tehniskie dokumenti
Specifikācija
Brand
Fuji ElectricMaximum Continuous Collector Current
400 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.25 kW
Package Type
M233
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
92 x 45 x 30mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Japan
Produkta apraksts
IGBT Modules 2-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 114,00
Katrs (Kaste ir 20) (bez PVN)
€ 137,94
Katrs (Kaste ir 20) (Ieskaitot PVN)
20
€ 114,00
Katrs (Kaste ir 20) (bez PVN)
€ 137,94
Katrs (Kaste ir 20) (Ieskaitot PVN)
20
Tehniskie dokumenti
Specifikācija
Brand
Fuji ElectricMaximum Continuous Collector Current
400 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.25 kW
Package Type
M233
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
92 x 45 x 30mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Japan
Produkta apraksts
IGBT Modules 2-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.