Fuji Electric 2MBi150VA-120-50 Series IGBT Module, 150 A 1200 V, 7-Pin M263, Panel Mount

RS noliktavas nr.: 771-6288Ražotājs: Fuji ElectricRažotāja kods: 2MBi150VA-120-50
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Tehniskie dokumenti

Specifikācija

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

785 W

Configuration

Series

Package Type

M263

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30mm

Maximum Operating Temperature

+150 °C

Produkta apraksts

IGBT Modules 2-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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€ 47,10

Katrs (bez PVN)

€ 56,99

Katrs (Ieskaitot PVN)

Fuji Electric 2MBi150VA-120-50 Series IGBT Module, 150 A 1200 V, 7-Pin M263, Panel Mount

€ 47,10

Katrs (bez PVN)

€ 56,99

Katrs (Ieskaitot PVN)

Fuji Electric 2MBi150VA-120-50 Series IGBT Module, 150 A 1200 V, 7-Pin M263, Panel Mount
Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

785 W

Configuration

Series

Package Type

M263

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30mm

Maximum Operating Temperature

+150 °C

Produkta apraksts

IGBT Modules 2-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.