Fuji Electric 1MBi50U4F-120L-50, M262 , N-Channel IGBT Module, 50 A max, 1200 V, Panel Mount
Tehniskie dokumenti
Specifikācija
Brand
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
275 W
Configuration
Single
Package Type
M262
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Single
Dimensions
94 x 34 x 30mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
IGBT Modules 1-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 43,90
Katrs (bez PVN)
€ 53,12
Katrs (Ieskaitot PVN)
1
€ 43,90
Katrs (bez PVN)
€ 53,12
Katrs (Ieskaitot PVN)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
275 W
Configuration
Single
Package Type
M262
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Single
Dimensions
94 x 34 x 30mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
IGBT Modules 1-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products