Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
29.6 nC @ 10 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Minimum Operating Temperature
-55 °C
Height
1.8mm
Produkta apraksts
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 4,21
€ 0,842 Katrs (Paka ir 5) (bez PVN)
€ 5,09
€ 1,019 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 4,21
€ 0,842 Katrs (Paka ir 5) (bez PVN)
€ 5,09
€ 1,019 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 20 | € 0,842 | € 4,21 |
25 - 45 | € 0,597 | € 2,98 |
50 - 245 | € 0,525 | € 2,62 |
250 - 495 | € 0,449 | € 2,24 |
500+ | € 0,431 | € 2,16 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
29.6 nC @ 10 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Minimum Operating Temperature
-55 °C
Height
1.8mm
Produkta apraksts