N-Channel MOSFET, 3.6 A, 60 V, 3-Pin SOT-89 Diodes Inc ZXMN6A11ZTA
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
2.6mm
Transistor Material
Si
Length
4.6mm
Typical Gate Charge @ Vgs
5.7 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.6mm
Produkta apraksts
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,943
Katrs (Paka ir 10) (bez PVN)
€ 1,141
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 0,943
Katrs (Paka ir 10) (bez PVN)
€ 1,141
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 10 - 40 | € 0,943 | € 9,43 |
| 50 - 240 | € 0,842 | € 8,42 |
| 250 - 490 | € 0,823 | € 8,23 |
| 500+ | € 0,801 | € 8,01 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
2.6mm
Transistor Material
Si
Length
4.6mm
Typical Gate Charge @ Vgs
5.7 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.6mm
Produkta apraksts
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products