Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.4 nC @ 4.5 V
Width
1.4mm
Height
1mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 5,45
€ 0,218 Katrs (Paka ir 25) (bez PVN)
€ 6,59
€ 0,264 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
€ 5,45
€ 0,218 Katrs (Paka ir 25) (bez PVN)
€ 6,59
€ 0,264 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
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Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.4 nC @ 4.5 V
Width
1.4mm
Height
1mm
Minimum Operating Temperature
-55 °C
Produkta apraksts