Diodes Inc P-Channel MOSFET, 280 mA, 60 V, 3-Pin E-Line ZVP2106A
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
280 mA
Maximum Drain Source Voltage
60 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Maximum Operating Temperature
+150 °C
Height
4.01mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 6,62
€ 0,662 Katrs (Paka ir 10) (bez PVN)
€ 8,01
€ 0,801 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 6,62
€ 0,662 Katrs (Paka ir 10) (bez PVN)
€ 8,01
€ 0,801 Katrs (Paka ir 10) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 10 - 30 | € 0,662 | € 6,62 |
| 40 - 190 | € 0,597 | € 5,97 |
| 200 - 990 | € 0,53 | € 5,30 |
| 1000 - 1990 | € 0,462 | € 4,62 |
| 2000+ | € 0,398 | € 3,98 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
280 mA
Maximum Drain Source Voltage
60 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Maximum Operating Temperature
+150 °C
Height
4.01mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products