Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-363 (SC-88)
Maximum Continuous Forward Current
350mA
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Isolated
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
6
Maximum Forward Voltage Drop
500mV
Number of Elements per Chip
3
Diode Technology
Schottky
Peak Reverse Recovery Time
10ns
Peak Non-Repetitive Forward Surge Current
1A
Izcelsmes valsts
China
Produkta apraksts
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
€ 14,15
€ 0,283 Katrs (Paka ir 50) (bez PVN)
€ 17,12
€ 0,342 Katrs (Paka ir 50) (Ieskaitot PVN)
Standarts
50
€ 14,15
€ 0,283 Katrs (Paka ir 50) (bez PVN)
€ 17,12
€ 0,342 Katrs (Paka ir 50) (Ieskaitot PVN)
Standarts
50
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
50 - 550 | € 0,283 | € 14,15 |
600 - 1450 | € 0,127 | € 6,35 |
1500+ | € 0,099 | € 4,95 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-363 (SC-88)
Maximum Continuous Forward Current
350mA
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Isolated
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
6
Maximum Forward Voltage Drop
500mV
Number of Elements per Chip
3
Diode Technology
Schottky
Peak Reverse Recovery Time
10ns
Peak Non-Repetitive Forward Surge Current
1A
Izcelsmes valsts
China
Produkta apraksts
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.