Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
18.2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
17.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.55mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.55mm
Typical Gate Charge @ Vgs
53.1 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.65mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 12,04
€ 0,602 Katrs (Paka ir 20) (bez PVN)
€ 14,57
€ 0,728 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
€ 12,04
€ 0,602 Katrs (Paka ir 20) (bez PVN)
€ 14,57
€ 0,728 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
20 - 80 | € 0,602 | € 12,04 |
100 - 480 | € 0,53 | € 10,60 |
500 - 980 | € 0,516 | € 10,32 |
1000 - 2480 | € 0,502 | € 10,04 |
2500+ | € 0,491 | € 9,82 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
18.2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
17.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.55mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.55mm
Typical Gate Charge @ Vgs
53.1 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.65mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts