Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
30 V
Package Type
PowerDI5060-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Width
5.1mm
Length
6mm
Typical Gate Charge @ Vgs
127 nC @ 10V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Izcelsmes valsts
China
€ 8,67
€ 0,867 Katrs (Paka ir 10) (bez PVN)
€ 10,49
€ 1,049 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 8,67
€ 0,867 Katrs (Paka ir 10) (bez PVN)
€ 10,49
€ 1,049 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
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Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
30 V
Package Type
PowerDI5060-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Width
5.1mm
Length
6mm
Typical Gate Charge @ Vgs
127 nC @ 10V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Izcelsmes valsts
China