Diodes Inc P-Channel MOSFET, 2.9 A, 30 V, 3-Pin SOT-23 DMP3099L-7

RS noliktavas nr.: 827-0503PRažotājs: DiodesZetexRažotāja kods: DMP3099L-7
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Specifikācija

Channel Type

P

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.08 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 5,40

€ 0,054 Katrs (tiek piegadats Rulli) (bez PVN)

€ 6,53

€ 0,065 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Diodes Inc P-Channel MOSFET, 2.9 A, 30 V, 3-Pin SOT-23 DMP3099L-7
Izvēlēties iepakojuma veidu

€ 5,40

€ 0,054 Katrs (tiek piegadats Rulli) (bez PVN)

€ 6,53

€ 0,065 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Diodes Inc P-Channel MOSFET, 2.9 A, 30 V, 3-Pin SOT-23 DMP3099L-7

Noliktavas stāvoklis patreiz nav pieejams

Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.08 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more