P-Channel MOSFET, 6 A, 30 V, 8-Pin SOP Diodes Inc DMP3056LSS-13

RS noliktavas nr.: 823-4037Ražotājs: DiodesZetexRažotāja kods: DMP3056LSS-13
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.3mm

Typical Gate Charge @ Vgs

13.7 nC @ 10 V

Width

4.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Produkta apraksts

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,161

Katrs (Paka ir 25) (bez PVN)

€ 0,195

Katrs (Paka ir 25) (Ieskaitot PVN)

P-Channel MOSFET, 6 A, 30 V, 8-Pin SOP Diodes Inc DMP3056LSS-13
Izvēlēties iepakojuma veidu

€ 0,161

Katrs (Paka ir 25) (bez PVN)

€ 0,195

Katrs (Paka ir 25) (Ieskaitot PVN)

P-Channel MOSFET, 6 A, 30 V, 8-Pin SOP Diodes Inc DMP3056LSS-13
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.3mm

Typical Gate Charge @ Vgs

13.7 nC @ 10 V

Width

4.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Produkta apraksts

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more