Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
21.1 nC @ 10 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Maximum Operating Temperature
+150 °C
Height
1.3mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 7,35
€ 0,294 Katrs (tiek piegadats Rulli) (bez PVN)
€ 8,89
€ 0,356 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
25
€ 7,35
€ 0,294 Katrs (tiek piegadats Rulli) (bez PVN)
€ 8,89
€ 0,356 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
25
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Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
21.1 nC @ 10 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Maximum Operating Temperature
+150 °C
Height
1.3mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts