P-Channel MOSFET, 90 A, 30 V, 8-Pin DI5060 Diodes Inc DMP3007SPS-13

RS noliktavas nr.: 146-4729Ražotājs: DiodesZetexRažotāja kods: DMP3007SPS-13
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

30 V

Package Type

DI5060

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.1mm

Typical Gate Charge @ Vgs

64.2 nC @ 10 V

Height

1.1mm

Series

DMP

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Produkta apraksts

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,397

Katrs (Rulli ir 2500) (bez PVN)

€ 0,48

Katrs (Rulli ir 2500) (Ieskaitot PVN)

P-Channel MOSFET, 90 A, 30 V, 8-Pin DI5060 Diodes Inc DMP3007SPS-13

€ 0,397

Katrs (Rulli ir 2500) (bez PVN)

€ 0,48

Katrs (Rulli ir 2500) (Ieskaitot PVN)

P-Channel MOSFET, 90 A, 30 V, 8-Pin DI5060 Diodes Inc DMP3007SPS-13
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

30 V

Package Type

DI5060

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.1mm

Typical Gate Charge @ Vgs

64.2 nC @ 10 V

Height

1.1mm

Series

DMP

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Produkta apraksts

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more