P-Channel MOSFET, 70 A, 30 V, 8-Pin PowerDI3333 Diodes Inc DMP3007SFG-7

RS noliktavas nr.: 146-4728Ražotājs: DiodesZetexRažotāja kods: DMP3007SFG-7
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

30 V

Series

DMP

Package Type

POWERDI3333

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Typical Gate Charge @ Vgs

64.2 nC @ 10 V

Width

3.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.35mm

Height

0.78mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Produkta apraksts

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,389

Katrs (Rulli ir 2000) (bez PVN)

€ 0,471

Katrs (Rulli ir 2000) (Ieskaitot PVN)

P-Channel MOSFET, 70 A, 30 V, 8-Pin PowerDI3333 Diodes Inc DMP3007SFG-7

€ 0,389

Katrs (Rulli ir 2000) (bez PVN)

€ 0,471

Katrs (Rulli ir 2000) (Ieskaitot PVN)

P-Channel MOSFET, 70 A, 30 V, 8-Pin PowerDI3333 Diodes Inc DMP3007SFG-7
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

30 V

Series

DMP

Package Type

POWERDI3333

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Typical Gate Charge @ Vgs

64.2 nC @ 10 V

Width

3.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.35mm

Height

0.78mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Produkta apraksts

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more