Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Length
1.25mm
Typical Gate Charge @ Vgs
0.8 nC @ 8V
Width
1.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.48mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,068
Katrs (Rulli ir 3000) (bez PVN)
€ 0,082
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,068
Katrs (Rulli ir 3000) (bez PVN)
€ 0,082
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
3000 - 6000 | € 0,068 | € 204,00 |
9000 - 12000 | € 0,065 | € 195,00 |
15000+ | € 0,063 | € 189,00 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Length
1.25mm
Typical Gate Charge @ Vgs
0.8 nC @ 8V
Width
1.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.48mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China