P-Channel MOSFET, 600 mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMP21D6UFD-7

RS noliktavas nr.: 182-6916Ražotājs: DiodesZetexRažotāja kods: DMP21D6UFD-7
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

20 V

Package Type

X1-DFN1212

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

800 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Length

1.25mm

Typical Gate Charge @ Vgs

0.8 nC @ 8V

Width

1.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

0.48mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,068

Katrs (Rulli ir 3000) (bez PVN)

€ 0,082

Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 600 mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMP21D6UFD-7

€ 0,068

Katrs (Rulli ir 3000) (bez PVN)

€ 0,082

Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 600 mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMP21D6UFD-7
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
3000 - 6000€ 0,068€ 204,00
9000 - 12000€ 0,065€ 195,00
15000+€ 0,063€ 189,00

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

20 V

Package Type

X1-DFN1212

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

800 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Length

1.25mm

Typical Gate Charge @ Vgs

0.8 nC @ 8V

Width

1.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

0.48mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more