P-Channel MOSFET, 6.5 A, 20 V, 8-Pin SO-8 Diodes Inc DMP2040USD-13

RS noliktavas nr.: 182-6908Ražotājs: DiodesZetexRažotāja kods: DMP2040USD-13
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

20 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Width

3.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.95mm

Typical Gate Charge @ Vgs

19 nC @ 8V

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,175

Katrs (Rulli ir 2500) (bez PVN)

€ 0,212

Katrs (Rulli ir 2500) (Ieskaitot PVN)

P-Channel MOSFET, 6.5 A, 20 V, 8-Pin SO-8 Diodes Inc DMP2040USD-13

€ 0,175

Katrs (Rulli ir 2500) (bez PVN)

€ 0,212

Katrs (Rulli ir 2500) (Ieskaitot PVN)

P-Channel MOSFET, 6.5 A, 20 V, 8-Pin SO-8 Diodes Inc DMP2040USD-13
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

20 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Width

3.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.95mm

Typical Gate Charge @ Vgs

19 nC @ 8V

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more